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| Central TM PROCESS Semiconductor Corp. Switch Diode CPD80 High Voltage Switching Diode Chip PROCESS DETAILS Process Die Size Die Thickness Anode Bonding Pad Area Top Side Metalization Back Side Metalization EPITAXIAL PLANAR 16 x 16 MILS 9.0 MILS 6.5 x 6.5 MILS Al - 30,000A Au - 18,000A GEOMETRY GROSS DIE PER 4 INCH WAFER 45,050 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 1N3070 CMDD2003 CMDD2004 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (22-October 2003) Central TM PROCESS CPD80 Semiconductor Corp. Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (22-October 2003) |
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